ELECTRONICS MCQ-1 BASIC nayak.monali2810@gmail.com 4 months ago BASIC ELECTRONICS MCQ 1 1 / 30 Which of the following is not an electronic device? a) A mobile b) A computer c) A magnifying glass d) A keyboard 2 / 30 Which of the following is not a physical component of an electronic circuit? a) Capacitor b) Inductor c) Diode d) Temperature 3 / 30 Which of the following is not a property of semiconductors used in electronic devices? a) They excite electrons b) They don’t emit light c) They have high thermal conductivity d) They have variable electrical conductivity 4 / 30 4. Which of the following is the correct relationship between temperature (T) and mobility (u) of electrons in electronic circuits? a) u ∝ T-3/2 b) u ∝ T-1/2 c) u ∝ T d) u ∝ T-1 5 / 30 5. What is the effect of temperature on the recombination rate of electrons in electronic circuits? a) Recombination rate increases with increase in the temperature b) Recombination rate decreases with increase in the temperature c) Recombination rate is independent of temperature c) Recombination rate is independent of temperature d) Recombination of electrons doesn’t occur in semiconductors 6 / 30 6. Which of the following is correct about semiconductors in electronic devices? a) Elemental semiconductors have direct band gap b) Compound semiconductors have indirect band gap c) Extrinsic semiconductors are injected with impurities d) Doping is done in Intrinsic semiconductors 7 / 30 7. Which of the following technique can’t be used for generating electron-hole pairs in electronic devices? a) Thermal excitation b) Impact ionization c) Photo excitation d) Impurity injection 8 / 30 8. Which of the following is not correct about semiconductors in electronic devices? a) Electrons are present below Fermi level in a semiconductor b) Degenerated semiconductors behave like a conductor c) Fermi level is independent of temperature and doping d) Pentavalent atoms are used in an n-type extrinsic semiconductor 9 / 30 9. Which of the following equation represents mass action law for semiconductors in electronic circuits? a) n × p = ni2 b) n × p = ni c) n × p = ni3 d) n × p = ni1/ 10 / 30 10. Which of the following is correct about Hall Effect in electronic circuits? a) Hall voltage is very weak in metals as compared to semiconductors b) Hall voltage is directly proportional to the charge density c) Hall voltage is inversely proportional to the intensity of the magnetic field d) Intrinsic semiconductor has a positive temperature coefficient of hall constant 11 / 30 11. Which of the following is not correct about a step-graded junction in electronic devices? a) Diodes with step-graded junctions are slower than a normal diode b) They are designed with abrupt junction c) They are either p+– n or p – n+ junction d) Depletion layer penetrates more into the lightly doped region 12 / 30 12. Which of the following is correct about photo diode electronic devices? a) P-N junction is connected in reverse bias. b) Electron-hole pairs are generated by impurity injection in depletion layer c) It is a photovoltaic cell d) No external voltage is applied 13 / 30 13. Which of the following is wrong about solar cell electronic devices? a) Solar cell responsivity is directly proportional to the wavelength of light b) It produces dark current c) It is a photovoltaic cell d) No external voltage is applied 14 / 30 14. What type of semiconductor is used in LED electronic circuits? a) Intrinsic semiconductor b) Compound semiconductor c) Degenerated semiconductor d) Compensated semiconductor 15 / 30 15. Which of the following semiconductor is mostly used to construct electronic circuits? a) Silicon b) Germanium c) Selenium d) Tin 16 / 30 16. Which of the following is correct about NMOS electronic circuits? a) It has N-substrate b) For inversion positive voltage is applied to the gate terminal c) For accumulation positive voltage is applied to the gate terminal d) NMOS has holes as the majority of carriers 17 / 30 17. Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit? a) If VT is less, channel form quickly for conductivity b) VT can be reduced by reducing oxide layer thickness c) VT is independent of ion implementation d) VT can be reduced by reducing substrate doping 18 / 30 18. Which of the following is the correct relationship between trans-conductance (Gm) and drain to source current (IDS) in an NMOS electronic circuit? a) Gm ∝ IDS-3/2 b) Gm ∝ IDS-1/2 c) Gm ∝ IDS d) Gm ∝ IDS1/2 19 / 30 19. In which of the following region does BJT act as the amplifier electronic device? a) Cut-off b) Saturation c) Active d) Reverse saturation 20 / 30 20. Which type of semiconductor is used in Tunnel Diode? a) Compound semiconductor b) Elemental semiconductor c) Degenerated semiconductor d) Extrinsic semiconductor 21 / 30 21. Which of the following is false about Fermi-Dirac distribution function f(E) used to understand semiconductors in electronic circuits? a) f(E) is the probability of finding an electron in an energy level E b) When the temperature decreases f(E) also increases c) f(E) doesn’t give the number of electrons in a given energy level d) f(E) doesn’t give the number of energy levels with electrons 22 / 30 22. An electronic circuit wire of conductivity 5.8 × 107 mho-m is subjected to an electric field of 40 mV/m. What will be its current density? a) 2.32 × 106 A/m2 b) 1.16 × 106 A/m2 c) 4.64 × 106 A/m2 d) 4.30 × 106 A/m2 23 / 30 23. Mass action law is not valid for which type of semiconductors in electronic devices? a) Compound b) Elemental c) Degenerative d) Compensated 24 / 30 24. Which of the following is the correct expression of current in an intrinsic semiconductor electronic circuit? a) ITotal = Ie + Ih b) ITotal = Ie – Ih c) ITotal = Ie + 2Ih d) ITotal = 2Ie + Ih 25 / 30 25. When an electronic circuit is in equilibrium then which of the following equation is valid? a) Jdrift + Jdiffusion = 1 b) Jdrift + Jdiffusion = 0 c) Jdrift + Jdiffusion = -1 d) Jdrift + Jdiffusion = 2 26 / 30 26. Which of the following is wrong about P-N junction diodes used in electronic devices? a) They have three modes of operations b) They have dynamic resistance at low-frequency AC voltage c) They have diffusion capacitance at high-frequency AC voltage d) They can act as ON-OFF switches 27 / 30 27. What is the conductivity of an extrinsic type semiconductor electronic device at 0K? a) maximum b) zero c) can’t be determined d) minimum 28 / 30 28. What is the conductivity of an extrinsic type semiconductor electronic device at 300K? a) Maximum b) Zero c) Can’t be determined d) Minimum 29 / 30 29. Which of the following effects is responsible for violating the mass action law in degenerative type semiconductor electronic devices? a) Thermal effect b) Bandgap narrowing effect c) Lattice vibration effect d) Electronic drift effect 30 / 30 30. Which of the following diode is used in ultra-high speed switching electronic circuits? a) Zener diode b) Varactor diode c) Tunnel diode d) Schottky diode Your score isThe average score is 0% 0% Restart quiz {{#message}}{{{message}}}{{/message}}{{^message}}Your submission failed. The server responded with {{status_text}} (code {{status_code}}). Please contact the developer of this form processor to improve this message. Learn More{{/message}}{{#message}}{{{message}}}{{/message}}{{^message}}It appears your submission was successful. Even though the server responded OK, it is possible the submission was not processed. Please contact the developer of this form processor to improve this message. Learn More{{/message}}Submitting…
